advance datasheet high performance itvs, 4 i/os, c i/o-vss <0.6pf, v cc with blocking diodes AT2140 sep. 2012 rev. 1.0 bcd semiconductor manufacturing limited 1 general description bcd itvs (integrated transient voltage suppression) devices are designed and built using a bcd proprietary process based on bcd standard technology. these devices integrate the various diodes, transistors and resistors requ ired to build these itvs products. these diodes and transistors feature low parasitic resistance and the diodes also exhibit low capacitance. using these devices, bcd is able to design voltage clamping products where low capacitance associated with low dynamic resistance is required. the bcd AT2140 is a general purpose, high performance and low cost device suitable for protecting high speed data in terfaces. the AT2140 is a unique design integrating low capacitance steering diodes and a clamping cell with associated blocking diodes, specially created to protect sensitive components connected to data transmission lines. the AT2140 is available in sot-23-6 package. this package allows simple an d optimal placement in existing high-speed pcb layout. figure 1. package type of AT2140 sot-23-6 f ea t ures ? low clamping voltage: typical 8v at 10a 100ns, tlp, vcc to vss typical 9v at 10a 100ns, tlp, i/o to vss 9.5v at 12a 8 s/20 s, vcc to vss 8.5v at 6a 8 s/20 s, i/o to vss ? iec 61000-4-2: 30kv (vcc to vss, air) 30kv (vcc to vss, contact) ? iec 61000-4-2: +28kv, -15kv (i/o to vss, air) +24kv, -14kv (i/o to vss, contact) ? iec 61000-4-5: 12a (vcc to vss) ? iec 61000-4-5: 6a (i/o to vss) ? tlp dynamic resistance, i/o to vss: 0.3 ? monolithic silicon technology applications ? hdmi 1.3, high definition multi media ? ieee 1394 ? laptop and personal computers ? flat panel displays ? video graphics cards ? sim ports
advance datasheet high performance itvs, 4 i/os, c i/o-vss <0.6pf, v cc with blocking diodes AT2140 sep. 2012 rev. 1.0 bcd semiconductor manufacturing limited 2 pin configuration k6 package (sot-23-6) 1 2 34 5 pin 1 mark 6 figure 2. pin configuration of AT2140 (top view) circuit diagram figure 3. circuit diagram of AT2140
advance datasheet high performance itvs, 4 i/os, c i/o-vss <0.6pf, v cc with blocking diodes AT2140 sep. 2012 rev. 1.0 bcd semiconductor manufacturing limited 3 ordering information AT2140 a - a circuit type package k6: sot-23-6 package temperature range part number marking id packing type sot-23-6 -55 to 85c AT2140k6- 5.0trg1 gjq tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. absolute maximum ratings (note 1) parameter symbol value unit peak pulse current (tp 8 s/20 s), vcc to vss i pp(vcc-vss) 12 a peak pulse current (tp 8 s/20 s) , i/o to vss i pp(i/o-vss) 6 a operating voltage (dc) 5.5 v iec61000-4-2 esd (air) vcc to vss 30 kv i/o to vss, vcc floating +28/-15 iec61000-4-2 esd (contact) vcc to vss 30 kv i/o to vss, vcc floating +24/-14 iec61000-4-5 (lightning) vcc to vss 12 a 120 w i/o to vss 6 a 54 w lead temperature (soldering, 10sec) t lead 260 oc operating temperature -55 to 85 oc storage temperature -55 to 150 oc note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. g1: green tr: tape & reel 5.0: fixed output 5.0v
advance datasheet high performance itvs, 4 i/os, c i/o-vss <0.6pf, v cc with blocking diodes AT2140 sep. 2012 rev. 1.0 bcd semiconductor manufacturing limited 4 electrical characteristics t a =25oc, unless otherwise specified. parameter symbol conditions min typ max unit working voltage, vcc to vss pin 5 to pin 2 -0.7 5.0 v channel leakage current i r v cc =5v,v ss =0v 1 typical performance characteristics t a =25c, unless otherwise specified. figure 4. bv, trigger voltage, holding voltage figure 5. current vs. voltage vs. temperature 012345678910 0 1 2 3 4 5 6 7 8 9 10 11 voltage from i/o to vss (v) voltage from vcc to vss (v) current from i/o to vss (a) current from vcc to vss (a) vcc to vss i/o to vss -60 -40 -20 0 20 40 60 80 100 120 140 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 bv, trigger voltage, holding voltage (v) temperature ( o c) bv v trig v h
advance datasheet high performance itvs, 4 i/os, c i/o-vss <0.6pf, v cc with blocking diodes AT2140 sep. 2012 rev. 1.0 bcd semiconductor manufacturing limited 5 typical performance characteristics (continued) t a =25c, unless otherwise specified. figure 6. waveform of i/o to gnd (positive) figure 7. waveform of vcc to vss (positive) figure 8. clamping voltage vs. current from i/o to vss (8 s/20 s) current waveform v clamping =8.5v 2v/div current waveform, (surge, 8x20 s, i pp =5.8a) 1a/div time 10 s/div v clamping =9.6v 2v/div current waveform, (surge, 8x20 s, i pp =12a) 2a/div time 10 s/div 1234567 6.0 6.5 7.0 7.5 8.0 8.5 9.0 iec61000-4-5 (lightning) clamping voltage (v) current from i/o to vss (a) voltage waveform current waveform voltage waveform
advance datasheet high performance itvs, 4 i/os, c i/o-vss <0.6pf, v cc with blocking diodes AT2140 sep. 2012 rev. 1.0 bcd semiconductor manufacturing limited 6 mechanical dimensions sot-23-6 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) unit: mm(inch) m i n mm(inch) max
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